Quantum dot/quantum well light emitting diode

Details Quantum dot/quantum well light emitting diode Quantum dot/quantum well light emitting diode

2007-07-10

2007-07-10

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S084000, C257S099000, C257S100000, C257S103000, C257SE25032, C257SE51032, C362S084000, C362S800000

Reexamination Certificate

active

11320654

ABSTRACT:
A quantum dot/quantum well light emitting diode (LED) is provided with a LED at one side of a substrate, and a second light emitting layer and a third light emitting layer at the other side of the substrate. When a proper forward bias is applied to the LED to emit a first light by the first light emitting layer, the first light is used to excite the second light emitting layer and the third light emitting layer to generate the second light output and the third light output of different colors respectively. Then, the light output of a desired color can be generated by mixing the first light, the second light and the third light.

REFERENCES:
patent: 6720584 (2004-04-01), Hata et al.
patent: 2006/0208262 (2006-09-01), Sakuma et al.
Tu et al.,Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition, 2004 The Japan Society of Applied Physics, vol. 43, No. 2B, 2004, pp. L264-L266.

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