Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2004-09-03
2009-06-30
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE29071, C257SE33034, C977S816000, C977S817000
Reexamination Certificate
active
07554109
ABSTRACT:
Optoelectronic devices are provided that incorporate quantum dots as the electroluminescent layer in an inorganic wide-bandgap heterostructure. The quantum dots serve as the optically active component of the device and, in multilayer quantum dot embodiments, facilitate nanoscale epitaxial lateral overgrowth (NELOG) in heterostructures having non-lattice matched substrates. The quantum dots in such devices will be electrically pumped and exhibit electroluminescence, as opposed to being optically pumped and exhibiting photoluminescence. There is no inherent “Stokes loss” in electroluminescence thus the devices of the present invention have potentially higher efficiency than optically pumped quantum dot devices. Devices resulting from the present invention are capable of providing deep green visible light, as well as, any other color in the visible spectrum, including white light by blending different sizes and compositions of the dots and controlling manufacturing processes.
REFERENCES:
patent: 5079186 (1992-01-01), Narusawa
patent: 6501091 (2002-12-01), Bawendi et al.
patent: 6639354 (2003-10-01), Kojima et al.
patent: 6649942 (2003-11-01), Hata et al.
patent: 6713954 (2004-03-01), Wakahara et al.
patent: 6720196 (2004-04-01), Kunisato et al.
patent: 6864502 (2005-03-01), Shibata et al.
patent: 6943377 (2005-09-01), Gaska et al.
patent: 7053420 (2006-05-01), Takatomo et al.
patent: 2002/0013042 (2002-01-01), Morkoc
patent: 2002/0022286 (2002-02-01), Nikolaev et al.
patent: 2002/0075924 (2002-06-01), Mukai
patent: 2002/0127224 (2002-09-01), Chen
patent: 2002/0136932 (2002-09-01), Yoshida
patent: 2003/0142944 (2003-07-01), Sundar et al.
patent: 2004/0023010 (2004-02-01), Bulovic et al.
patent: 2005/0230673 (2005-10-01), Mueller et al.
patent: 1 403 379 (2003-03-01), None
patent: 09148624 (1997-06-01), None
Hasan Mohamed-Ali
Pagan Jennifer G.
Stokes Edward B.
Sunderasan Kamal
Dot Metrics Technology, Inc.
Jackson, Jr. Jerome
Lee & Morse P.C.
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