Quantum dot optoelectronic device having an Sb-containing...

Details Quantum dot optoelectronic device having an Sb-containing... Quantum dot optoelectronic device having an Sb-containing...

2006-08-09

2008-11-25

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S012000

Reexamination Certificate

active

07456423

ABSTRACT:
A quantum dot optoelectronic device has an overgrown layer containing antimony (Sb). The optical characteristics and thermal stability of the optoelectronic device are thus greatly enhanced due to the improved crystal quality and carrier confinement of the quantum dot structure.

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