Quantum dot memory

Details Quantum dot memory Quantum dot memory

2011-07-05

2011-07-05

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C257S288000, C257SE29255, C438S962000, C438S045000

Reexamination Certificate

active

07972878

ABSTRACT:
A method of making a quantum dot memory cell, the quantum dot memory cell including an array of quantum dots disposed between a first electrode and a second electrode, includes obtaining values for a tunneling current through the quantum dot memory cell as a function of a voltage applied to the quantum dot memory cell and selecting parameters of the quantum dot memory cell such that the tunneling current through the quantum dot memory cell exhibits a bistable current for at least some values of the voltage applied to the quantum dot memory cell. The values for the tunneling current are determined on the basis of a density of states of the array of quantum dots.

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