Quantum dot laser diode and method of manufacturing the same

Details Quantum dot laser diode and method of manufacturing the same Quantum dot laser diode and method of manufacturing the same

2006-12-01

2009-08-18

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S032000, C438S046000, C257SE21001

Reexamination Certificate

active

07575943

ABSTRACT:
Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.

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