Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-07-12
2011-07-12
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S015000, C257S016000, C257S017000, C257S022000, C257SE29069, C257SE29071, C257SE29072, C257SE29073, C257SE29074, C257SE29075, C257SE29076, C257SE29077, C257SE29078, C257SE33008, C977S759000
Reexamination Certificate
active
07977666
ABSTRACT:
The present invention is disclosed that a device capable of normal incident detection of infrared light to efficiently convert infrared light into electric signals. The device includes a substrate, a first contact layer formed on the substrate, an active layer formed on the first contact layer, a barrier layer formed on the active layer and a second contact layer formed on the barrier layer, wherein the active layer includes multiple quantum dot layers.
REFERENCES:
patent: 6239449 (2001-05-01), Fafard et al.
patent: 6445000 (2002-09-01), Masalkar et al.
patent: 7473922 (2009-01-01), Uchiyama et al.
patent: 7795609 (2010-09-01), Huffaker et al.
patent: 7816701 (2010-10-01), Kim
patent: 7915521 (2011-03-01), Forrest et al.
patent: 2002/0094597 (2002-07-01), Lin et al.
patent: 2010/0176370 (2010-07-01), Yokoyama et al.
patent: 2010/0224857 (2010-09-01), Soh et al.
patent: 2010/0224859 (2010-09-01), Gough et al.
patent: 2010/0289001 (2010-11-01), Kahen et al.
patent: 2010/0289061 (2010-11-01), Matsukura
patent: 2011/0067752 (2011-03-01), Fafard
Ling et al., H. S., High Quantum Efficiency Dots-in-a-Well Quantum Dot Infrared Photodetectors with AlGaAs Confinement Enhancing Layer, Applied Physics Letters 92, Published online May 13, 2008, American Institute of Physics.
Lee Chien-Ping
Ling Hong-Shi
Lo Ming-Cheng
Wang Shiang-Yu
Academia Sinica
Bacon & Thomas PLLC
Soward Ida M
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