Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2005-06-27
2010-06-08
Gurley, Lynne A (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257SE33014, C977S784000, C977S951000
Reexamination Certificate
active
07732237
ABSTRACT:
A method of forming an optically active region on a silicon substrate includes the steps of epitaxially growing a silicon buffer layer on the silicon substrate and epitaxially growing a SiGe cladding layer having a plurality of arrays of quantum dots disposed therein, the quantum dots being formed from a compound semiconductor material having a lattice mismatch with the silicon buffer layer. The optically active region may be incorporated into devices such as light emitting diodes, laser diodes, and photodetectors.
REFERENCES:
patent: 5310451 (1994-05-01), Tejwani et al.
patent: 5351163 (1994-09-01), Dawson et al.
patent: 5395481 (1995-03-01), McCarthy
patent: 5413679 (1995-05-01), Godbey
patent: 5557627 (1996-09-01), Schneider et al.
patent: 5888885 (1999-03-01), Xie
patent: 6046065 (2000-04-01), Goldstein et al.
patent: 6521041 (2003-02-01), Wu et al.
patent: 6596555 (2003-07-01), Bensahel et al.
patent: 6697413 (2004-02-01), Hwang et al.
patent: 2004/0042518 (2004-03-01), Tatum et al.
patent: 2008/0006817 (2008-01-01), Kawaguchi
PCT International Search Report for PCT/US2005/022661, Applicant: The Regents of the University of California, Form PCT/ISA/220 and PCT/ISA/210, dated Jan. 18, 2008 (4 pages).
PCT Written Opinion for PCT/US2005/022661, Applicant: The Regents of the University of California, Form PCT/ISA/237, dated Jan. 18, 2008 (8 pages).
PCT International Preliminary Report on Patentability (Chapter I of the Patent Cooperation Treaty) for PCT/US2005/022661, Applicant: The Regents of the University of California., Form PCT/IB/326 and 373, dated Apr. 2, 2009 (9 pages).
Arena Andrew O
Gurley Lynne A
The Regents of the University of California
Vista IP Group LLP
LandOfFree
Quantum dot based optoelectronic device and method of making... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Quantum dot based optoelectronic device and method of making..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum dot based optoelectronic device and method of making... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4160768