Quantum diffraction transistor

Details Quantum diffraction transistor Quantum diffraction transistor

1997-09-17

1999-11-30

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 24, 257192, H01L 29775, H01L 29778

Patent

active

059947144

ABSTRACT:
The present invention discloses a technique for applying diffraction characteristic of electrons to a two-dimensional electronic device to manufacture multi-functional transistor having various ON/OFF states. A quantum diffraction transistor according to the present invention is capable of adjusting the amplitude of drain current and having various ON/OFF states utilizing diffraction characteristic of electrons by interposing a reflection-type diffraction grating in an electron path. The inventive multi-functional quantum diffraction transistor uses a two dimensional electron gas in formed at a different species junction in a semiconductor heterostructure, and has a bent electron path between the source electrode and the drain electrode with a reflection-type diffraction grating. The quantum diffraction effect of the electrons is used for the control of the diffracted drain current.

REFERENCES:
patent: 4962410 (1990-10-01), Kriman et al.
patent: 5280181 (1994-01-01), Saito
patent: 5497015 (1996-03-01), Ishibashi
patent: 5640022 (1997-06-01), Inai

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