Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-09-20
1996-04-30
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 21, 257 22, H01L 2906, H01L 310328, H01L 310336
Patent
active
055127622
ABSTRACT:
A quantum box array comprising a plurality of quantum boxes is made by providing a plurality of box-shaped quantum well portions on a first barrier layer and a second barrier layer covering the quantum well portions. The quantum box array is designed so that interaction energy between electrons or holes is amply larger than transfer energy between the quantum boxes. A control electrode is provided on the second barrier layer to vary the number of electrons or holes in the quantum box array by changing the potential of the control electrode. In spite of using a relatively small number of electrons or holes, the quantum device can suppress fluctuation in density of electrons or holes, can have three or more states, and reduces the power consumption.
REFERENCES:
patent: 5073893 (1991-12-01), Kondou
patent: 5126804 (1992-06-01), Nagai et al.
patent: 5293050 (1994-03-01), Chapple-Sokol et al.
patent: 5294807 (1994-03-01), Ugajin et al.
Nomoto Kazumasa
Suzuki Toshikazu
Ugajin Ryuichi
Mintel William
Sony Corporation
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