Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-10-28
1995-08-22
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 23, 257 24, 257 25, 257 17, H01L 29161
Patent
active
054442672
ABSTRACT:
A quantum device including a plate-like conductor part having a necking portion made by forming a first mask layer having a first strip portion on a conductor substrate; forming a second mask layer having a second strip portion on the conductor substrate; etching a region of the conductor substrate which is not covered with the first and second mask layers, by using the first and second mask layers as an etching mask, to form a plurality of first recess portions on a surface of the conductor substrate; selectively covering side faces of the plurality of first recess portions, and side faces of the first and second mask layers with a side wall film; selectively removing only the second mask layer; etching another region of the conductor substrate which is not covered with the first mask layer and the side wall film, by using the first mask layer and the side wall film as an etching mask, to form a plurality of second recess portions on the surface of the conductor substrate; selectively removing part of another region of the surface of the conductor substrate which is not covered with the first mask layer and the side wall film; and removing the first mask layer and the side wall film, to form the plate-like conductor part having the necking portion.
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Hirai Yoshihiko
Morimoto Kiyoshi
Niwa Masaaki
Okada Kenji
Udagawa Masaharu
Matsushita Electric - Industrial Co., Ltd.
Mintel William
Tran Minhloan
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