Quantum device fabrication method

Details Quantum device fabrication method Quantum device fabrication method

1992-03-27

1993-11-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437105, 156612, H01L 21203

Patent

active

052583260

ABSTRACT:
The present invention is directed to a method of fabricating quantum devices such as quantum boxes and quantum wires measuring as small as several tens of nanometers utilizing selectivity based on crystal plane orientation. A substrate is provided with a surface having an (100) crystal plane orientation. A first layer of a semiconductor material, such as AlGaAs or GaAs, is epitaxially grown on the surface of the substrate as a trapezoid having a (100) crystal plane orientation top surface and a (111)B crystal plane orientation side surface around the top surface. An As.sub.2 beam is used for MBE growth of a second layer of GaAs or InGaAs on the (100) surface of the first layer. The growth of the third layer on the (111)B crystal plane orientation region is prevented by an As trimer structure such that growth only takes place at the (100) crystal plane orientation region.

REFERENCES:
patent: 4797374 (1989-01-01), Scott et al.
"Growth mechanism of GaAs during migration enhanced epitaxy at low growth tempertures" by Yoshiji Horekoshi and Minora Kawashima in Jap. Jr. Appl. Physics vol. 28(2), 200-209 (1989).
Applied Physics Letters, vol. 56, p. 2642 (1990) by J. A. Lebens, C. S. Tsai, K. J. Vabala and T. F. Kuech.

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