Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2005-09-06
2005-09-06
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S017000, C313S310000
Reexamination Certificate
active
06940087
ABSTRACT:
Disclosed is an electron source10including an electron source element10aformed on the side of one surface of an insulative substrate1. The electron source element10aincludes a lower electrode2, a composite nanocrystal layer6and a surface electrode7. The composite nanocrystal layer6includes a plurality of polycrystalline silicon grains51, a thin silicon oxide film52formed over the surface of each of the grains51, a number of nanocrystalline silicons63residing between the adjacent grains51, and a silicon oxide film64formed over the surface of each of the nanocrystalline silicons63. The silicon oxide film64is an insulating film having a thickness less than the crystal grain size of the nanocrystalline silicon63. The surface electrode7is formed of a carbon thin film7alaminated on the composite nanocrystal layer6while being in contact therewith, and a metal thin film7blaminated on the carbon thin film7a.
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N. Kosida et al., “Multifunctional Properties of Nanocrystalline Porous Silicon as a Quantum-Confined Material,” Materials Science and Engineering C, vol. 19, pp. 285-289, Jan. 2, 2002.
Ichihara Tsutomu
Komoda Takuya
Koshida Nobuyoshi
Greenblum & Bernstein P.L.C.
Jackson Jerome
Koshida Nobuyoshi
Matsushita Electric & Works Ltd.
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