Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1998-06-03
2000-06-27
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 24, 257 25, 257194, H01L 2906
Patent
active
060809957
ABSTRACT:
A quantum device functioning as a memory device is provided for allowing high-speed writing and erasing of data with a low gate voltage. A source electrode and a drain electrode are formed on a substrate. A gate electrode is formed between the source and drain electrodes. Between the substrate and the gate electrode, a first barrier layer, a first quantum well layer, a second barrier layer, a second quantum well layer and a third barrier layer are stacked to form coupled quantum well layer. The thickness of each of the first and second barrier layers allows electron tunneling. The thickness of the third barrier layer does not allow electron tunneling. The energy level of the first quantum well layer is higher than the Fermi level of a conduction layer. The energy level of the second quantum well layer is lower than the energy level of the first quantum well layer. With an application of voltage to the gate electrode, a transition of electrons takes place by means of tunneling through the first quantum well layer to the second quantum well layer and the electrons are accumulated therein.
REFERENCES:
patent: 5629231 (1997-05-01), Kiehl
patent: 5714766 (1998-02-01), Chen et al.
Crane Sara
Sony Corporation
LandOfFree
Quantum device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Quantum device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1786509