Quantum detector array

Details Quantum detector array Quantum detector array

2008-10-15

2010-11-02

Porta, David P (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

Reexamination Certificate

active

07825384

ABSTRACT:
A quantum detector array is provided. The array includes a semiconductor substrate and an epitaxial layer on the semiconductor substrate. The epitaxial layer includes a plurality of binary quantum sensor elements operable in breakdown mode to generate signals, logic elements, and a digital processing circuit. The binary quantum sensor elements each have a radiation-sensitive drift region and amplification region with a pn junction for detecting radiation from a radiation-emission source. The logic elements are each electrically interconnected to a corresponding binary sensor element of the plurality of binary quantum sensor elements for resetting the corresponding binary sensor element, generating digital information based on the signals received from the corresponding binary sensor element, and outputting the digital information. The digital processing circuit carries out digital processing of logic and time signals from the binary sensor elements.

REFERENCES:
patent: 4647781 (1987-03-01), Takagi et al.
patent: 5025151 (1991-06-01), Melcher
patent: 5378911 (1995-01-01), Murakami
patent: 5453623 (1995-09-01), Wong et al.
patent: 5484750 (1996-01-01), Greskovich et al.
patent: 5600145 (1997-02-01), Plummer
patent: 5864146 (1999-01-01), Karellas
patent: 6281504 (2001-08-01), Takayama et al.
patent: 6630077 (2003-10-01), Shiang et al.
patent: 6793848 (2004-09-01), Vartuli et al.
patent: 6885827 (2005-04-01), Shushakov et al.
patent: 7008558 (2006-03-01), Vartuli et al.
patent: 7084403 (2006-08-01), Srivastava et al.
patent: 7085502 (2006-08-01), Shushakov et al.
patent: 7115875 (2006-10-01), Worstell
patent: 7535011 (2009-05-01), Chowdhury et al.
patent: 2001/0032934 (2001-10-01), Lee et al.
patent: 2003/0080298 (2003-05-01), Karplus et al.
patent: 2005/0012033 (2005-01-01), Stern
patent: 2006/0124832 (2006-06-01), Harmon et al.
patent: 2008/0156993 (2008-07-01), Weinberg et al.
patent: WO 2007/126074 (2007-10-01), None
Saveliev, “The recent development and study of silicon photomultiplier,”, 2004, Nuclear Instruments and Methods in Physics Research, vol. A 535, pp. 528-532.
Okamura et al., “A light-transmitting two-dimensional photodetector array using a a-Si pin photodiodes and poly-Si TFT's Integrated on a Transparent substrate,” 1994, IEEE Transactions on Electron Devices, vol. 41, No. 2, pp. 180-185.
Stewart et al., “Study of the properties of new SPM detectors,” 2006, Proceedings of SPIE, Semiconductor Photodetectors III, vol. 6119.
Meng et al., “Effects of electron and gamma-ray irradiation on CMOS analog image sensors,” 2003, Elsevier Microelectronics Reliability, vol. 43, pp. 1151-1155.
Tan et al., “High-voltage accumulation-layer UMOSFET's in 4H-SiC,” 1998, IEEE Electron Device Letters, vol. 19, No. 12, pp. 487-489.
A. D. Lucas, “Epitaxial silicon avalanche photodiode,” 1974, Opto-electronics, Vo. 6, pp. 153-160.
Pal et al., “Small-signal analysis of a p-n junction avalanche diode having a uniform avalanche zone and a drift zone for unequal ionization rates and drift velocities of electrons and holes,” 1971, Journal of Physics D: Applied Physics, vol. 4, pp. 2041-2048.
Hamamatsu, MPPC Multi-Pixel Photon Counter, Nuclear Science Symposium, Oct. 29 to Nov. 4, 2006, 1-14 pgs, San Diego, California, USA.
Jackson et al., A Novel Silicon Geiger-Mode Avalanche Photodiode, Proceedings IEDM, 32-2, Dec. 2002.
V. Golovin et al., Novel type of avalance photodetector with Geiger mode operation, Nuclear Instruments and Methods in Physics Research A 518 (2004) 560-564.
Lempicki et al., LuAIO3:Ce and other aluminate scintillators, IEEE, Transactions on Nuclear Science, pp. 307-311 (1995).
Lempicki et al., LuAIO3: Ce and other aluminate scintillators, IEEE Transactions on Nuclear Science, vol. 42, No. 4, pp. 280-284 (1995).
Nikl et al., Traps and timing characteristics of LuAG:Ce3+ scintillator, Phys. Stat. Sol. 181 (2000).
Li et al., Fabrication of transparent cerium-doped lutetium aluminum garnet . . . Method, J. Am. Ceram. Soc. 88[11] 3226-3228 (2005).
Moehrs et al., A detector head design for small animal PET with silicon photomultipliers (SiPM), Phys. Med. Biol. 51, 1113-1127 (2006).
Zappa, Spada: Single-photon avalanche diode arrays, IEEE Photonics Technology Letters, vol. 17, No. 3, 657-59 (2005).
Aull, et al., Geiger-mode avalanche photodiodes for three-dimensional imaging, Lincoln Lab. Journal, vol. 13, No. 2, 335-350 (2002).
Saveliev, Silicon photomultiplier: Physics, development and applications, Obninsk State University, Russia/ DESY, Hamburg (May 19, 2006) (pp. 1-36).
V. Saveliev et al., Silicon avalanche photodiodes . . . metal resistor-semiconductor MRS structures, Nuclear Instruments and Methods in Physics Research A 442 (2000) 223-229.
V. Saveliev, The recent developments and study of silicon photomultiplier, Nuclear Instruments and Methods in Physics Research A535 (2004) 528-532.
V. Saveliev, Silicon-photomultiplier: recent developments and results, Oral Presentation IEEE, NSS2004, pp. 1-20 (2001).
D. McElroy, et al., Evaluation of silicon photomultipliers: A promising . . . compatible PET, Nuclear Instruments and Methods in Physics Research A571 (2007) 106-09.
V. Saveliev, SiPM resent development and applications, Oral Presentation at 4th Beaune Conference on new developments in photodetectors (2005, France) pp. 1-24.
V. Saveliev, SiPM Resent development and study, Oral Presentation on IEEE 2005 (2005), pp. 1-20.
A.G. Stewart, et al., Study of the properties of new SPM detectors, Proceedings of SPIE: Semiconductor Photodetectors III, vol. 6119 (2006) (10 pages).
Motomura et al., “Development of a lead x-ray compensation method in simultaneous T1-201 SPECT & . . . ”, IEEE Transactions on Neclear Science, vol. 44, No. 6 (Dec. 1997) 2459-64.
Saveliev, Physics, Development and Applications, Obninsk State University, Russia/DESY, Hamburg (May 4, 2006) (pp. 1-41).
International Search Report for WO 2007/120674.
Mar. 24, 2009 Office Action for U.S. Appl. No. 11/783,613.

Affiliated with

Also associated with

Rating

Quantum detector array does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Quantum detector array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum detector array will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4232814