Quantum collector hot-electron transistor

Details Quantum collector hot-electron transistor Quantum collector hot-electron transistor

1993-02-04

1994-01-11

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 26, 257197, 257198, 257 22, H01L 29161

Patent

active

052784274

ABSTRACT:
A high-speed semiconductor device which comprises an emitter layer, a base layer, a collector layer, a potential barrier layer disposed between the emitter layer and the base layer, and a superlattice disposed between the base layer and the collector layer. The superlattice provides a multitude of quantum-mechanical transmission coefficients which can be applied to linear analog circuits and high frequency circuit. In addition, the high speed semiconductor device may act as a frequency multiplier, providing an output signal having 2n times as many frequencies as an input signal when n is the number of energy pass bands in said superlattice below a predetermined applied voltage.

REFERENCES:
patent: 4878095 (1989-10-01), Bending et al.
patent: 4922314 (1990-05-01), Shannon
Capasso et al., "Resonant Tunneling Spectroscopy of Hot Minority Electrons njected in Gallium Arsenide Quantum Wells", Appl. Phys. Lett., vol. 50, No. 14, Apr. 6, 1987, pp. 930-932.
"Quantum Transport and Phonon Emission of Nonequilibrium Hot Electrons", K. K. Choi et al., Physical Review B, vol. 41, No. 14, May 15, 1990, pp. 10250-10253.

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