Quantum chromeless lithography

Etching a substrate: processes – Forming or treating mask used for its nonetching function

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216 24, 216 67, B44C 122

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active

055336345

ABSTRACT:
This invention describes the use and method of fabrication of a chromeless quantum phase shift mask and of a chromeless quantum phase shift build-on blank. The build-on blank can be readily inspected, stored for future use, and completed with a feature pattern when needed. The quantum phase shift mask provides improved image resolution and depth of focus tolerance. The quantum phase shift mask requires little or no CAD, or computer aided design, modification over that used for conventional masks.

REFERENCES:
patent: 4780175 (1988-10-01), Taneya et al.
patent: 5045417 (1991-09-01), Okamoto
patent: 5100508 (1992-03-01), Yoshida et al.
patent: 5190836 (1993-03-01), Nakagawa et al.
patent: 5194344 (1993-03-01), Cathey, Jr. et al.
patent: 5194345 (1993-03-01), Rolfson
patent: 5194346 (1993-03-01), Rolfson et al.
patent: 5208125 (1993-05-01), Lowrey et al.
patent: 5217830 (1993-06-01), Lowrey
patent: 5225035 (1993-07-01), Rolfson
"Lithography's Leading Edge--Part I: Phase-Shift Technology" pub. in Semiconductor International Feb. 1992 pp. 42-47.

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