Quantum cascade laser structure

Details Quantum cascade laser structure Quantum cascade laser structure

2008-07-10

2010-12-07

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S044010, C372S045012

Reexamination Certificate

active

07848376

ABSTRACT:
A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110ato110j) and barrier layers (105to105j). The material of at least one quantum well (110ato110j) as well as the material of at least one barrier layer (105to105j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells (110ato110j) and barrier layers (105to105j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade (100). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells (110ato110j) has only one constituent material and the material of at least one barrier layer (105d, 105e, 105f) has at least two constituent materials (111a, 111b, 112a, 112b, 113a, 113b).

REFERENCES:
patent: 4999844 (1991-03-01), Imamoto
patent: 6023482 (2000-02-01), Capasso et al.
patent: 6232624 (2001-05-01), Matloubian et al.
patent: 6324199 (2001-11-01), Capasso et al.
patent: 7558305 (2009-07-01), Botez et al.

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