Quantum cascade laser

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S045012, C372S043010, C372S044010

Reexamination Certificate

active

08068528

ABSTRACT:
A quantum cascade laser includes a semiconductor substrate, and an active layer which is provided on the semiconductor substrate, and has a cascade structure in which unit laminate structures16having quantum well emission layers17and injection layers18are laminated in multiple stages. Further, the quantum cascade laser is configured such that the unit laminate structure16has an emission upper level Lup, an emission lower level Llow, and a relaxation miniband MB including an energy level lower than the emission lower level in its subband level structure, and light is generated by an intersubband transition of electrons from the upper level to the lower level, and the electrons after the intersubband transition are relaxed from the lower level Llowto the miniband MB through LO phonon scattering, to be injected from the injection layer18to the latter stage emission layer via the miniband MB. Thereby, the quantum cascade laser which is capable of efficiently forming an inverted population in the quantum well emission layer, to improve its laser operation performance, is realized.

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