Quantum cascade laser

Details Quantum cascade laser Quantum cascade laser

2007-08-29

2010-11-30

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S044010, C372S043010

Reexamination Certificate

active

07843981

ABSTRACT:
A quantum cascade laser is composed of a semiconductor substrate, and an active layer provided on the semiconductor substrate and having a cascade structure formed by multistage-laminating unit laminate structures16each of which includes a quantum well light emitting layer17and an injection layer18. The unit laminate structure16has, in its subband level structure, an emission upper level3, an emission lower level2, and an injection level4as an energy level higher than the emission upper level3, and light hν is generated by means of intersubband transition of electrons from the level3to the level2in the light emitting layer17, and electrons through the intersubband transition are injected into the injection level in a unit laminate structure of the subsequent stage via the injection layer18, and from this injection level, electrons are supplied to the emission upper level. Thereby, a quantum cascade laser which realizes operation with a high output at a high temperature is realized.

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Williams et al., “Terahertz Quantum-Cascade Laser at λ≈ 100 μm using metal waveguide for mode confinement”;Applied Physics Letters, vol. 83, 2003, pp. 2124-2126.

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