Quantum box structure and carrier conductivity modulating device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Having graded composition

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257 23, 257 25, 257196, H01L 310328, H01L 310336, H01L 31072, H01L 3526

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active

058312943

ABSTRACT:
A quantum box structure and a carrier conductivity modulating quantum device are disclosed. The quantum box structure comprises a quantum boxes array including a plurality of quantum boxes arranged adjacent to each other on a common plane. Each quantum box is asymmetric in a direction orthogonal to the plane in one of composition of materials constituting the quantum box and geometry of the quantum box. The carrier conductivity modulating quantum device comprises a plurality of regions including quantum boxes arrays including a plurality of quantum boxes arranged on a common plane. Each regions exhibits at least one of a metal phase and an insulator phase. Each quantum box is asymmetric in a direction orthogonal to the plane at least in one of composition of materials constituting the quantum box and geometry of the quantum box.

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