Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-07-26
1997-03-04
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 14, 257 15, 257 17, 257 22, 372 44, H01L 2906
Patent
active
056082290
ABSTRACT:
A semiconductor device having: an underlie having a semiconductor surface capable of growing thereon single crystal; and a first semiconductor layer, the first semiconductor layer including: a first region of group III-V compound semiconductor epitaxially grown on generally the whole area of the semiconductor surface; and second regions of group III-V compound semiconductor disposed and scattered in the first region, the second region having a different composition ratio of constituent elements from the first region, wherein lattice constants of the first and second regions in no strain state differ from a lattice constant of the semiconductor surface, and a difference between the lattice constant of the second region in no strain state and the lattice constant of the semiconductor surface is greater than a difference between the lattice constant of the first region in no strain state and the lattice constant of the semiconductor surface. A semiconductor device having a quantum box structure is provided capable of being manufactured by relatively simple processes.
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Mukai Kohki
Ohtsuka Nobuyuki
Crane Sara W.
Fujitsu Limited
Wille Douglas
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