Coherent light generators – Particular active media – Semiconductor
Patent
1991-11-08
1993-10-05
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
H01S 319
Patent
active
052512240
ABSTRACT:
The quantum barrier semiconductor optical devices according to this invention are characterized by strained layer super lattice multiple quantum barriers provided between active layer and p-clad layer or within p-clad layer to obtain resonance scattering of incident overflowing electrons, that is to realize phase condition in which the incident overflowing electron wave and reflected electron wave enhance each other, in the double heterostructure where active layer having at least one GaInAs(P) layer is sandwiched between n-clad layer and p-clad layer. In this case, the active layer should desirably have quantum well structure. The quantum barrier semiconductor optical device comprises a DCCtype double heterostructure made by growing an n-clad layer, a fist active layer having at least one GaInAs(P) sub-layer, a middle clad layer, a second active layer having at least one GaThAS(p) sub-layer, and a p-clad layer in the order of mention or vice versa and a super lattice resonance scattering type quantum barriers provided between the first active layer and middle clad layer or in the middle clad layer and/or between the second active layer and p-clad layer or within p-clad layer. In this case also, the active layer should desirably have quantum well structure and the quantum barriers should desirably be made up of strained layer super lattice.
REFERENCES:
patent: 5132981 (1992-07-01), Uomi et al.
patent: 5181086 (1993-01-01), Yoshida
Agrawal, G. P. et al., Chpt. 3, "Recombination Mechanisms in Semiconductors", Longwavelength Semiconductor Lasers, Oct. 1986, Van Nostrand Reinhold Co., pp. 70-138.
Yano, M. et al, "Temperature Characteristics of Double-Carrier-Confinement (DCC) Heterojunction InGaAsP(.lambda.=1.3 .mu.m)/InP Lasers", IEEE J. Quantum Electronics, vol. QE-19, No. 8, Aug. 1983, pp. 1319-1327.
Japanese Laid-Open Patent Official Gazette No. 46788/1988 (Iga, Koyama and Uenohara, Tokyo Institute of Technology) Feb. 1988.
Iga, K. et al., "Electron Reflectance of Multiquantum Barrier (MQB)", Electronics Letter, vol. 22, No. 19, 11 Sep. 1986, pp. 1008-1009.
"Achievements of 660 nm GaInP/AlInP Visible Light Lasers by a Novel Multi-Quantum Barrier (MQB) Effect", IEEE, Laser Conference, PD-10, 1990. (no month).
Hasenberg, T. C. et al, "Low Threshold, high T.sub.o InGaAsP/InP 1.3 .mu.m lasers grown on p-type InP substrates", Appl. Phys. Lett. 49(7), 18 Aug. 1986, pp. 400-402.
Uenohara, et al, "Analysis of Electron Wave Reflectivity and Leakage Current of Multi Quantum Barrier: MQB", The Transactions of the Institute of Electronics Information and Communication Engineers, vol. J70-C No. 6, pp. 851-857, Jun., 1987.
Schiff, L. I., "Continuous Eigenvalues: Collision Theory", Quantum Mechanics, pp. 100-105, Feb. 1968, 3rd ed. Publisher: McGraw.
Schuermeyer, F. L. et al, "Band-edge Alignment In Heterostructures", Appl. Phys. Lett. 55(18), 30 Oct. 1989, pp. 1877-1878.
Irikawa Michinori
Iwase Masayuki
Davie James W.
The Furukawa Electric Co. Ltd.
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