Quantized Hall effect switching devices

Details Quantized Hall effect switching devices Quantized Hall effect switching devices

1982-06-10

1984-12-11

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 83, 357 2, 357 4, 307309, H01L 2722, H01L 2504, H01L 4500, H01L 2982

Patent

active

044881649

ABSTRACT:
A switching element (e.g., 30) is furnished by an inversion layer (e.g., 55) in a zero resistance state under the influence of a quantizing magnetic field, the inversion layer having a ring geometry. Voltage (e.g., V.sub.o) applied across a pair of localized spaced apart terminals (e.g., 37, 38)--one on a portion of the inner edge of the ring, the other on the outer edge--produces a percolating current in the inversion layer, that is, a current circulating around the ring in a zero resistance state. This percolating current suddenly vanishes when a control voltage is applied to an auxiliary (gate) electrode (e.g., 51), whereby an output voltage (e.g., V.sub.out) previously developed across another pair of localized spaced apart terminals (e.g., 47, 48) on either edge of the ring suddenly also vanishes.

REFERENCES:
patent: 3196282 (1965-07-01), Ittner
patent: 3303427 (1967-02-01), Esaki
patent: 3763407 (1973-10-01), Yazawa
patent: 4398342 (1983-08-01), Pitt et al.
P. W. Shackle, "Measurement of the Hall Coefficient in Liquid Metals by the Corbino Method," Phil. Mag., Ser. 8, vol. 21, 1970, pp. 987-1002.
D. C. Tsui et al., "Zero-Resistance State of Two-Dimensional Electrons in a Quantizing Magnetic Field," Physical Review B, vol. 25, No. 2, Jan. 15, 1982, pp. 1405-1407.
S. Kawaji "Quantum Galvanomagnetic Experiments in Silicon Inversion Layers Under Strong Magnetic Fields," Surface Science, vol. 73, 1978, pp. 46-69.
D. C. Tsui et al., "Resistance Standard Using Quantization of the Hall Resistance of GaAs-Al.sub.x Ga.sub.1-x As Heterostructures," Applied Physics Letters, vol. 38, Apr. 1, 1981, pp. 550-552.
K. V. Klitzing et al., "New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance," Physical Review Letters, vol. 45, No. 6, Aug. 11, 1980, pp. 494-497.

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