Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-05-26
1996-01-23
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257627, 257628, H01L 2988, H01L 31036
Patent
active
054867061
ABSTRACT:
By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon thin plate is sufficiently thin so as to act as a quantum well. Further, a pair of silicon oxide films acting as tunneling barriers are formed on the surfaces of the side walls of the silicon thin plate, thus forming a double barrier structure. In addition, a pair of polysilicon electrodes are formed and sandwich the double barrier structure. As a result, the structure of a resonance tunneling diode, which utilizes the resonance tunneling effect, is provided. Adding a third electrode to the above structure provides a hot electron transistor. In the quantization functional devices having the above-described configuration, the satisfactory resonance effect is obtained due to a high crystallinity of the quantum well, a high potential barrier brought by the high quality silicon oxide films used as the tunneling barriers and a smooth interface between the quantum well and the tunneling barriers.
REFERENCES:
patent: 3121177 (1964-02-01), Davis
patent: 3171762 (1965-03-01), Rutz
patent: 5093699 (1992-03-01), Weichold et al.
patent: 5234848 (1993-08-01), Seabaugh
IBM TDB vol. 34 No. 4A Sep. 1991 pp. 251-252.
K. Ismail et al., "Electron Resonant Tunneling in Si/SiGe Double Barrier Diodes", Appl. Phys. Lett. 59(8), pp. 973-975 (Aug. 1991).
M. Hirose et al., "Resonant Tunneling Through Si/SiO.sub.2 Double Barriers" Japanese Journal of Applied Physics, vol. 16, pp. 561-564 (1977).
J. C. Hensel, et al., "Transistor Action in Si/CoSi.sub.2 /Si Heterostructures", Appl. Phys. Lett., vol. 47(2), pp. 151-153, (Jul. 1985).
R. Esaki et al., "Super Lattice Hetero Structure Device", pp. 397-435 (Sep. 1988).
K. Saki et al., "Resonant Tunneling Through SiO.sub.2 /Si/SiO.sub.2 Double Barriers", Extended Abstracts (The 52nd Autumn Meeting, 1991); The Japan Society of Applied Physics, No. 2, p. 653, 10a-B-3.
Hirai Yoshihiko
Morimoto Kiyoshi
Niwa Masaaki
Okada Kenji
Udagawa Masaharu
Jackson Jerome
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Quantization functional device utilizing a resonance tunneling e does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Quantization functional device utilizing a resonance tunneling e, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantization functional device utilizing a resonance tunneling e will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1506476