Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-11-27
1999-08-31
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 14, H01L 2906
Patent
active
059456876
ABSTRACT:
A quantization functional device includes: a silicon thin layer having a first surface and a second surface each made of a predetermined crystal surface, and the silicon thin layer being formed of single crystalline silicon having a thickness sufficiently thin to function as a quantum well; a pair of tunnel barriers respectively provided on the first and second surfaces of the silicon thin layer; and a first electrode and a second electrode operatively coupled to each other and formed so as to interpose the silicon thin layer and the pair of the tunnel barriers therebetween.
REFERENCES:
patent: 3121177 (1964-02-01), Davis
patent: 3171762 (1965-03-01), Rutz
patent: 5093699 (1992-03-01), Weichold et al.
patent: 5216262 (1993-06-01), Tsu
patent: 5234848 (1993-08-01), Seabaugh
patent: 5376823 (1994-12-01), Kojima et al.
patent: 5422305 (1995-06-01), Seabaugh et al.
patent: 5444267 (1995-08-01), Okada et al.
patent: 5486706 (1996-01-01), Yuki et al.
patent: 5514614 (1996-05-01), Yuki et al.
patent: 5562802 (1996-10-01), Okada et al.
patent: 5723872 (1998-03-01), Seabaugh et al.
R. Esaki et al., "Tunnel Effect and the Devices Relating the Same", Superlattice Hetero Structure pp. 397-435 (Sep. 1988).
R. Esaki et al., "Molecular Beam Epitaxy (MBE)", Superlattice Hetero Structure Device, pp. 197-252 (1988).
K. Ismail et al., "Electron Resonant Tunneling in Si/SiGe Double Barrier Diodes", Appl. Phys. Lett. 59(8), pp. 973-975.
M. Hirose et al., "Resonant Tunneling Through Si/SiO.sub.2 Double Barriera", Japanese Journal of Applied Physics, vol. 16, pp. 561-564 (1977).
J.C. Hensel, et al., "Transistor Action in Si/CoSi.sub.2 /Si Heterostructures", Appl. Phys. Lett., vol. 47(2), pp. 151-153 (Jul. 1985).
K. Saki et al., "Resonant Tunneling Through SiO.sub.2 /Si/SiO.sub.2 Double Barriers", Extended Abstracts (The 52nd Autumn Meeting, 1991): The Japan Society of Applied Physics, No. 2, p. 653, 10a-B-3.
IBM Technical Disclosure Bulletin, vol. 34, No. 4A Sep. 1991, pp. 251-252.
Hirai Yoshihiko
Morimoto Kiyoshi
Morita Kiyoyuki
Yuki Koichiro
Chaudhuri Olik
Matsushita Electric - Industrial Co., Ltd.
Wille Douglas A.
LandOfFree
Quantization functional device, quantization functional apparatu does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Quantization functional device, quantization functional apparatu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantization functional device, quantization functional apparatu will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2427010