Quantifying and predicting the impact of line edge roughness...

Details Quantifying and predicting the impact of line edge roughness... Quantifying and predicting the impact of line edge roughness...

2008-05-27

2008-05-27

Hirl, Joseph P. (Department: 2129)

Data processing: artificial intelligence

Machine learning

C706S021000, C706S015000

Reexamination Certificate

active

07379924

ABSTRACT:
Systems and methods are disclosed for testing semiconductors at the wafer level, specifically, systems and methods are disclosed that quantify line-edge roughness in terms of electrical properties and the impact of the line-edge roughness on device reliability and performance. A voltage ramp dielectric breakdown (VRDB) test is used to measure the breakdown voltage of the inter-digitated fingers of a semiconductor device. The distribution of breakdown voltage is used to measure the median breakdown voltage and the outliers which fan the extrinsic tail. Thereby, VRDB is used to quantify the impact LER will have on device reliability and performance. The systems and methods also provide a feedback tool to the fabrication process to control line edge roughness to a desired specification.

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