Quality indicator bit (QIB) generation in wireless...

Multiplex communications – Communication over free space – Repeater

Reexamination Certificate

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C455S069000, C455S522000

Reexamination Certificate

active

07075905

ABSTRACT:
Techniques for generating quality indicator bits in a wireless communication system (e.g., a cdma2000 that implements IS-2000). In one method, a determination is first made whether a good data frame was received from a first transmission for the current frame interval. This first transmission may be a non-continuous transmission on a forward dedicated control channel (F-DCCH) defined by IS-2000. If a good data frame was received, then a quality indicator bit is generated based on the good data frame. Otherwise, the quality indicator bit is generated based on a second transmission, which may comprise power control bits that are transmitted even when no data frames are sent in the first transmission. The received signal quality for the power control bits can be measured and compared against a threshold, and the quality indicator bit is then set based on the result of the comparison. The threshold may be dynamically updated.

REFERENCES:
patent: 2498186 (1950-02-01), Stockbarger et al.
patent: 2550173 (1951-04-01), Swinehart et al.
patent: 3766080 (1973-10-01), Swinehart et al.
patent: 3769230 (1973-10-01), Robinson et al.
patent: 3959442 (1976-05-01), Pastor et al.
patent: 4038201 (1977-07-01), Hargreaves
patent: 4048514 (1977-09-01), Haussuehl et al.
patent: 4053572 (1977-10-01), Moss et al.
patent: 4101331 (1978-07-01), Anderson
patent: 4128589 (1978-12-01), Pastor et al.
patent: 5000548 (1991-03-01), Mercado
patent: 5039858 (1991-08-01), Anderson et al.
patent: 5245629 (1993-09-01), Hall
patent: 5461639 (1995-10-01), Wheatley et al.
patent: 5757846 (1998-05-01), Vasudevan
patent: 5768684 (1998-06-01), Grubb et al.
patent: 5852627 (1998-12-01), Ershov
patent: 5856991 (1999-01-01), Ershov
patent: 5901163 (1999-05-01), Ershov
patent: 5970082 (1999-10-01), Ershov
patent: 5978409 (1999-11-01), Das et al.
patent: 5982800 (1999-11-01), Ishihara et al.
patent: 6069749 (2000-05-01), Omura
patent: 6181480 (2001-01-01), Ito
patent: 6201634 (2001-03-01), Sakuma et al.
patent: 6298080 (2001-10-01), Heist et al.
patent: 6309461 (2001-10-01), Gianoulakis et al.
patent: 6342312 (2002-01-01), Oba et al.
patent: 6377338 (2002-04-01), Suenaga
patent: 6395657 (2002-05-01), Mayolet et al.
patent: 6451111 (2002-09-01), Beall et al.
patent: 6526031 (2003-02-01), Zaff et al.
patent: 6728551 (2004-04-01), Chang
patent: 6731948 (2004-05-01), Lee et al.
patent: 2001/0033553 (2001-10-01), Bi et al.
patent: 2001/0040880 (2001-11-01), Chen et al.
patent: 2001/0046878 (2001-11-01), Chang
patent: 2002/0011202 (2002-01-01), Gianoulakis et al.
patent: 2002/0081977 (2002-06-01), McCune, Jr.
patent: 2002/1012497 (2002-08-01), Sparrow
patent: 1 291 321 (1969-03-01), None
patent: 222 426 (1998-05-01), None
patent: 0 875 778 (1998-11-01), None
patent: 0 942 297 (1999-09-01), None
patent: 1 006 373 (2000-06-01), None
patent: 0 869 203 (2001-08-01), None
patent: 1 130 419 (2001-09-01), None
patent: 1 139 138 (2001-10-01), None
patent: 09-315894 (1997-12-01), None
patent: 10-1310 (1998-01-01), None
patent: 10-59799 (1998-03-01), None
patent: 91/11734 (1991-08-01), None
patent: 0 942 297 (1999-09-01), None
patent: 99/46836 (1999-09-01), None
patent: 00/75697 (2000-12-01), None
patent: 01/01182 (2001-01-01), None
patent: 01/37052 (2001-05-01), None
patent: 02/31232 (2002-04-01), None
“Growth and Properties of Scintillating Crystals BaF2,” Jiang et al.,Journal of Crystal Growth, vol. 79, No. 1-3, Dec. 1986, pp. 720-722.
“Modern Optical Engineering-The Design of Optical Systems,” Warren J. Smith,Modern Opt Eng, McGraw-Hill Book Company, 1966, Article: “Optical Materials and Coatings,” pp 145-161; Article: “The Design of Optical Systems: General,” pp 326-355.
U.S. Appl. No. 09/327,043, filed Jun. 7, 1999, Gianoulakis et al., Crystal Growth and Annealing Method and Apparatus, pp. 1-21.
OPTOVAC, Optical Crystal Handbook, Jan. 1993, pp. 1-41.
“Optical Characteristics of Large Single Crystals of Fluorides”, Chernevskaya, E.G., et al., Opt. Technol. (USSR), Jun. 1973, vol. 40, No. 6 pp. 379-380.
Lambda Physik webpage: www.lambdaphysik.com/Microlithography/fullstory.asp?news—id=22, Lithography News, Lambda Physik Ships Fifth 157nm Lithography Laser, p. 1.
Lambda Physik webpage: www.lambdaphysik.com/Microlithography
ovaline.asp, Novaline ® Lithography Series, pp. 1-2.
Lambda Physik webpage: www.lambdaphysik.com/Microlithography/mooreslaw.asp, Lithography—History, Moore's Law, pp. 1-3.
“Lambda Physik Fourth Annual 157nm/EUV Symposium” website: http://www.lambdaphysik.com/microlithography/157. (printed out Nov. 2001).
“Spatial Dispersion in the Dielectric Constant of GaAs,” Yu et al.,Solid State Comm, vol. 9, pp. 1421-1424, 1971.
“Technology at a Glance-Fall 2001,” Website: http://www.nist.gov/public—affairs/taglance/tag01fall/fall2001.htm, pp 1-11.
“Semicon West 2001,” Website: http://www.nist.gov/public—affairs/factsheet/semiconwest01.htm.
“Metrology Supporting Deep Ultraviolet Lithography.” Website:http://www.eeel.nist.gov/810.0/lithography—deep.html, published Jun. 2001, Ofc of Microelectronic Programs.
“Minimizing Spatial-dispersion-induced birefringence in crystals used for precision optics by using mixed crystals of materials with the opposite sign of the birefringence.” Website: http://physics.nist.gov/Divisions/Div842/Gp3/DUVMatChar/birefring.html. updated Aug. 1, 2001.
“The Trouble with Calcium Fluoride.”SPIEs oeMagazine, pp 23-25, Mar. 2002.
“Ca1−XBaXF2and Ca1−XSrXF2Mixed Crystals as potential solution to intrinsic birefringence problem for 157nm lithography,” Burnett et al.,SEMATECH 157nm Tech Data Rev, Dec. 11, 2001, NIST.
“Stress-Optical coefficients of 157nm Materials,” Burnett et al.,SEMATECH 157nm Tech Data Rev, Dec. 11, 2001, NIST.
“Intrinsic Birefringence in 157nm Materials,” Burnett et al.,2ndIntl'l Symposium on 157nm Lithography, May 15, 2001, NIST.
NIST updates for Jul. 9, 2001, website: http://www.nist.gov/public—affairs/update/upd010709.htm, pp 1-8.
“Electron and Optical Physics Division” website: http://physics.nist.gov/TechAct/Div841/div841h.html,Tech Activities 2001, pp 1-9.
“Atomic Physics Division” website: http://physics.nist.gov/TechAct/Div842/div842h.html,Tech Activities 2001, pp 1-17.
“Plasma Radiation Group; DUV Sources and Materials Characterization” website: http://physics.nist.gov/Divisions/Div 842/Gp3/DIVMatChar/index/html., pp 1-2.
“Absolute refractive indices and thermal coefficients of fused silica and calcium fluoride near 193 nm,”Appl Optics, vol. 37, No. 25, Sep. 1, 1998, pp 5964-5968.
“Intrinsic Birefringence in calcium fluoride and barium fluoride,”Phys Review B, vol. 64, 241102(r), pp 1-4.
“Polarizability of Fluoride Ions in Fluorides with Fluorite-type structure” Sorokin, N.I.,Crystallography Reports, vol. 45, No. 6, 2000, pp 976-978.
“Optical Anisotropy of Silicon Single Crystals” Pastrnak et al.,Phys Review B, vol. 3, No. 8, Apr. 15, 1971, pp 2567-2571.
Barium Fluoride and Magnesium Fluoride Product Information, ISP Corp, www.ispoptics.com.
Barium Fluoride Patinal product info, EM Industries, website: www.emicoe.com/barfluor.cfm.
“Materials Problem snags 157nm lithography”EETimeswebsite: www.eetimes.com/story/OEG20010720S0106, Jul. 20, 2001, 4 pages.
“Industry Weighs shift to 157nm lithography”EETimeswebsite: ww.eetimes.com/story/OEG20000518S0010, May 18, 2000, 4 pages.

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