Image analysis – Applications – Manufacturing or product inspection
Reexamination Certificate
2003-07-15
2008-08-26
Mehta, Bhavesh (Department: 2624)
Image analysis
Applications
Manufacturing or product inspection
C348S131000, C359S385000, C703S013000
Reexamination Certificate
active
07418124
ABSTRACT:
Methods that include acquiring aerial images of a reticle for different values of a member of a set of lithographic variables are provided. One method also includes determining a presence of an anomaly in a design pattern of the reticle by comparing at least one pair of the aerial images corresponding to at least two of the different values. A different method includes comparing at least one pair of the aerial images corresponding to at least two of the different values and determining an area on the reticle where a lithography process using the reticle is most susceptible to failure based on the results of the comparison. Another embodiment includes determining a presence of transient repeating defects on the reticle by subtracting non-transient defects from the aerial images and comparing at least one pair of the aerial images corresponding to at least two of the different values.
REFERENCES:
patent: 4578810 (1986-03-01), MacFarlane et al.
patent: 5046109 (1991-09-01), Fujimori et al.
patent: 5444480 (1995-08-01), Sumita
patent: 5932377 (1999-08-01), Ferguson et al.
patent: 5965306 (1999-10-01), Mansfield et al.
patent: 6091846 (2000-07-01), Lin et al.
patent: 6171737 (2001-01-01), Phan et al.
patent: 6268093 (2001-07-01), Kenan et al.
patent: 6373975 (2002-04-01), Bula et al.
patent: 6665065 (2003-12-01), Phan et al.
patent: 6701004 (2004-03-01), Shykind et al.
patent: 6757645 (2004-06-01), Chang et al.
patent: 6902855 (2005-06-01), Peterson et al.
patent: 7133548 (2006-11-01), Kenan et al.
patent: 2002/0181756 (2002-12-01), Shibuya et al.
patent: 1 093 017 (2001-04-01), None
patent: 00/36525 (2000-06-01), None
Allan et al, Critical Area Extraction for Soft Fault Estimation, Feb. 1998, IEEE, vol. II, No. I, p. 1-3.
Budd et al., “A New Mask Evaluation Tool, the Microlithography Simulation Microscope Aerial Image Measurement System,” SPIE vol. 2197, 1994, pp. 530-540.
Schurz et al., “Simulation Study of Reticle Enhancement Technology Applications for 157 nm Lithography,” SPIE vol. 4562, 2002, pp. 902-913.
Martino et al., “Application of the Aerial Image Measurement System (AIMS™) to the Analysis of Binary Mask Imaging and Resolution Enhancement Techniques,” SPIE vol. 2197, 1994, pp. 573-584.
International Search Report, application No. PCT/US03/21907, mailed Jun. 7, 2004.
Sahouria et al., “Full-chip Process Simulation for Silicon DRC,” Mentor Graphics, Mar. 2000, 6 pages.
Granik et al., “Sub-resolution process windows and yield estimation technique based on detailed full-chip CD simulation,” Mentor Graphics, Sep. 2000, 5 pages.
Hoff Mike Von den
Peterson Ingrid B.
Wiley Jim
Baker & McKenzie LLP
KLA-Tencor Technologies Corp.
Mehta Bhavesh
Yuan Kathleen S
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