Electricity: measuring and testing – Conductor identification or location – Inaccessible
Patent
1978-01-05
1979-06-05
Krawczewicz, Stanley T.
Electricity: measuring and testing
Conductor identification or location
Inaccessible
29574, 324 71SN, 324 65R, 324158R, G01R 2702
Patent
active
041574974
ABSTRACT:
Semi-insulating GaAs material is qualified for ion implantation by taking a sample or samples from the material to be evaluated, polishing a surface of the sample, and chemically etching the surface to remove mechanical damage. The surface is bombarded with ions of an inert gas such as krypton, helium, argon, neon, or xenon. After bombardment, the sample is annealed and the sheet resistance is measured to determine if it meets a predetermined acceptable value.
REFERENCES:
patent: 3290179 (1966-12-01), Goulding
patent: 4058413 (1977-11-01), Wilch et al.
Guseva et al., Investigation of the Hall Effect in p-Type Semiconducting Diamond Doped With Boron by the Ion Implantation Method, Soviet Physics, Semiconductors, vol. 4, No. 1, Jul. 1970, pp. 12-16.
Oosthoek et al., The Thermal Properties of High Value Gallium and Boron Implanted Resistors in Silicon, European Conference on Ion Implantation, Sep. 7-9, 1970, pp. 88-91.
Cahen et al., A New Method for Fast Measurement of Ion Implantation Profiles, European Conference on Ion Implantation, Sep. 7-9, 1970, p. 192.
Sealy, An Examination of Tellurium Ion-Implanted GaAs by Transmission Electron Microscopy, Journal of Materials Science, 1975, pp. 683-691.
Eisen Fred H.
Welch Bryant
Zucca Ricardo
Humphries L. Lee
Krawczewicz Stanley T.
Malin Craig O.
Rockwell International Corporation
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