Quad memory cell and method of making same

Details Quad memory cell and method of making same Quad memory cell and method of making same

2011-03-22

2011-03-22

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

C438S039000, C438S129000, C438S141000, C438S237000, C438S328000, C257SE21053, C257SE21180, C257SE21602, C257SE21613, C257SE21645

Reexamination Certificate

active

07910407

ABSTRACT:
A non-volatile memory device includes a first electrode, a diode steering element, at least three resistivity switching storage elements, and a second electrode. The diode steering element electrically contacts the first electrode and the at least three resistivity switching storage elements. The second electrode electrically contacts only one of the at least three resistivity switching storage elements.

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