Quad memory cell and method of making same

Details Quad memory cell and method of making same Quad memory cell and method of making same

2011-04-12

2011-04-12

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S530000, C257SE23146, C257SE23147, C365S069000, C365S148000, C365S072000

Reexamination Certificate

active

07923812

ABSTRACT:
A non-volatile memory device includes a first electrode, a diode steering element, at least three resistivity switching storage elements, and a second electrode. The diode steering element electrically contacts the first electrode and the at least three resistivity switching storage elements. The second electrode electrically contacts only one of the at least three resistivity switching storage elements.

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