Q-switched parametric cavity amplifier

Amplifiers – Parametric amplifiers

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C330S004600, C330S004900, C333S218000

Reexamination Certificate

active

06265934

ABSTRACT:

BACKGROUND OF THE INVENTION
In certain applications, it is difficult to obtain required microwave energy signals because of restrictions in energy sources, weight and the available volume for such equipment. Such limitations are frequently present in applications involving microwave equipment used in missiles, airplanes, and satellites. In general, it is more difficult to produce microwave signals as the frequency of the required signal increases. One method for producing a high frequency signal is to use a multiplier device such as shown in U.S. Pat. No. 5,731,752 entitled “Microwave Signal Frequency Multiplier.” Certain microwave signals are continuous and others are switched, which are typically used for producing pulses.
There exists a need for a switched, microwave amplifier which can store energy from an available microwave source and selectively release this energy as pulses when required.
SUMMARY OF THE INVENTION
A selected embodiment of the present invention is a switched microwave amplifier which includes a housing having an interior cavity. An input port is connected to the housing for providing an input signal to the interior cavity of the housing. An output port is connected to the housing for conveying an output signal from the amplifier. A pump signal port is connected to the housing for coupling a pump signal to the interior cavity of the housing. The interior cavity comprises a first cavity that is resonant with the input signal and the output signal. A non-linear medium is positioned within the first cavity for producing carriers therein in response to the pump signal. A frequency selective barrier within the interior cavity substantially reflects the pump signal and substantially transmits the input signal. The frequency selective barrier defines a pump signal resonant cavity within the housing interior cavity. An output signal is produced within the first cavity as a result of interaction of the input signal and the liberated carriers. The output signal is at the frequency of the input signal and has a greater amplitude than the input signal. A two-state switch is coupled in series with the output port wherein the switch has a first state for blocking transfer of stored energy from the first cavity and has a second state to permit release of the stored energy from the first cavity through the output port.


REFERENCES:
patent: 3290619 (1966-12-01), Geusic et al.
patent: 3379956 (1968-04-01), Battles et al.
patent: 3617764 (1971-11-01), Patel
patent: 3628186 (1971-12-01), Ashkin
patent: 3631331 (1971-12-01), Fairley et al.
patent: 3742335 (1973-06-01), Konishi
patent: 3772528 (1973-11-01), Anderson
patent: 3944950 (1976-03-01), Jacobs et al.
patent: 3963977 (1976-06-01), Mitsui
patent: 4527137 (1985-07-01), Hartley
patent: 4595892 (1986-06-01), Martinetti et al.
patent: 4636758 (1987-01-01), Mettoudi
patent: 4712121 (1987-12-01), Yokoyama
patent: 4782222 (1988-11-01), Ragle et al.
patent: 4996505 (1991-02-01), Keilmann
patent: 5278427 (1994-01-01), Choi
patent: 5422613 (1995-06-01), Nativ
patent: 5731752 (1998-03-01), Wood
patent: 5796314 (1998-08-01), Tantawi et al.
patent: 5796902 (1998-08-01), Bhat et al.
patent: 5880921 (1999-03-01), Tham et al.
Stephan Ohr, “Darpa Sows Seeds of a Telecom Revolution,”EE Times,Aug. 4, 1997, p. 1.
F.M. Mueller, et al, “HTS Microwave Cavity with Temperature-Independent Frequencies,”IEEE Transactions on Applied Superconductivity,vol. 5, No. 2, Jun. 1995, pp 1983-1986.
C.J. Maggiore, et al, “Low-loss Microwave Cavity Using Layered-dielectric Materials,” Appl. Phys. Lett 64 (11) Mar. 14, 1994.
E. Yablonovitch, “Photonic Band-gap Structures,” Journal of the Optical Society of America Bulletin, vol. 10, No. 2, Feb. 1993, pp 283-295.
Henry Q. Everitt, “Applications of Photonic Band Gap Structures,”Optics and Photonics News,Nov. 1992, pp 20-23.
“Application Notes for Bulk Window™ Waveguide Switch Elements,” M/A Com Semiconductor Products Operation, Burlington, MA 01803, pp 3-3 through 3-8.
N.C. Luhmann, Jr., High Power, High Efficiency, Monolithic Quasi-Optical Frequency Triplers Using Microwave Power Module Drivers, Feb. 27, 1996.
Joy Yi-Yin Liao, “Frequency Multipliers for Millimeter Wave Applications,” Riken Review, No. 11, Dec. 1995, pp5-6.
J. Grenzer, et al, “Frequency Multiplication of Microwave Radiation in a Semiconductor Superlattice by Electrons Capable to Perform Bloch Oscillations,” Annalen der Physik, Apr. 1995, pp 265-271.
K.N. Ostricov, et al, “Resonant Second Harmonics Generation of the Submillimeter Surface Wave in the Semiconductor Superlattice Bounded by a Metal,” IEEE Antennas and Propagation Society Int'l Symposium, 1995 Digest, vol. I, pp 742-45.
D. Lippens, “Quantum Well Devices for Millimetre Wave Applications,” 23rdEuropean Microwave Conference, Madrid, Spain, Sep. 1993, pp 61-66.
M. Hadjazi, et al “60 GHz Reflection Gain Based on Superlattice Negative Differential Conductance,”Electronics Letters,Apr. 15, 1993, vol. 29, No. 8.
Wen-Shiung Lour, “Multi-state Superlattice-Emitter Resonant-Tunneling Bipolar Transistor with Circuit Applications,”Superlattices and Microstructures,1993, Academic Press Ltd., pp 81-86.
Federico Capasso, “Quantum Effect Devices: Physics and Applications,” edited by Anastassakis & Joannopoulos, 20thInternational Conference on The Physics of Semiconductor, Aug. 1990, pp 379-386.
A.Y. Cho, “Current State and Future Challenge in Molecular Beam Epitaxy (MBE) Research,” Molecular Beam Epitaxy 1988, Sapporo, Japan, Reprinted fromJournal of Crystal Growth,95 (1989) Nos. 104, pp 1-10.
Tohru Takada et al, “Frequency Triplers and Quadruplers with GaAs Schottky-Barrier Diodes at 450 and 600 GHz,” IEEE Transactions on Microwave Theory and Techniques, vol MTT-27, No. 5, May 1979, pp 519-523.
L.A. Blackwell et al, “Semiconductor-Diode Parametric Amplifiers,” Prentice-Hall Inc., 1961, pp 57-60 and 101-121.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Q-switched parametric cavity amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Q-switched parametric cavity amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Q-switched parametric cavity amplifier will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2536714

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.