Q-switched cavity multiplier

Wave transmission lines and networks – Frequency multipliers

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C327S116000, C327S119000, C327S123000

Reexamination Certificate

active

06297716

ABSTRACT:

TECHNICAL FIELD OF THE INVENTION
The present invention pertains in general to devices for multiplying the frequency of microwave signals and in particular to such devices, which have a plurality of different resonant cavities.
BACKGROUND OF THE INVENTION
Certain applications utilizing microwave signals require the production of a very high frequency signal in the microwave range. In general, the efficiency of producing a high frequency signal becomes less as the frequency of the signal increases. Therefore, the use of a frequency multiplier device with relatively high conversion efficiency can be a practical approach to the production of high frequency microwave signals. One type of microwave frequency multipliers is described in a white paper proposal entitled “High Power, High Efficiency, Monolithic Quasi-Optical Frequency Triplers Using Microwave Power Module Drivers” by N. C. Luhman, Jr. dated Feb. 27, 1996. The frequency multiplier described in this paper is an elongate waveguide device, which includes input and output filters and a multiplier array comprising diodes with antenna leads. A cavity multiplier, which does not utilize switching, is described in U.S. Pat. No. 5,731,752 entitled “Microwave Signal Frequency Multiplier.”
There exists a need for a switched, microwave frequency multiplier, which can store energy at a frequency which is a multiple of a source signal and selectively release this energy when required.
SUMMARY OF THE INVENTION
A selected embodiment of the present invention is a switched microwave frequency signal multiplier, which includes a pump signal cavity for receiving a pump signal via an input port. A nonlinear medium is positioned within the pump signal cavity for receiving the pump signal and producing therefrom a harmonic signal of the pump signal. A frequency selective barrier is positioned within the pump signal cavity for defining a harmonic signal cavity for storing therein energy at the harmonic signal frequency. The frequency selective barrier is substantially transparent to the pump signal and substantially reflective to the harmonic signal. An output port is coupled to the harmonic signal cavity. A two-state switch is positioned in series with the output port. When the switch is set to a first state it blocks the transfer of the stored energy from the harmonic signal cavity. When set to the second state, the switch releases the stored energy from the harmonic signal cavity through the output port to produce a microwave signal pulse.


REFERENCES:
patent: 3290619 (1966-12-01), Geusic et al.
patent: 3379956 (1968-04-01), Battles et al.
patent: 3631331 (1971-12-01), Fairley et al.
patent: 3742335 (1973-06-01), Konishi
patent: 3944950 (1976-03-01), Jacobs et al.
patent: 3963977 (1976-06-01), Mitsui
patent: 4342008 (1982-07-01), Jewett
patent: 4527137 (1985-07-01), Hartley
patent: 4595892 (1986-06-01), Martinetti et al.
patent: 4636758 (1987-01-01), Mettoudi
patent: 4712121 (1987-12-01), Yokoyama
patent: 4782222 (1988-11-01), Ragle et al.
patent: 4996505 (1991-02-01), Keilmann
patent: 5278427 (1994-01-01), Choi
patent: 5422613 (1995-06-01), Nativ
patent: 5731752 (1998-03-01), Wood
patent: 5796314 (1998-08-01), Tantawi et al.
patent: 5880921 (1999-03-01), Tham et al.
“Application Notes for Bulk Window™ Waveguide Switch Elements”,M/A Com Semiconductor Products Operation, Burlington, MA 01803, pp. 3-3 through 3-8, 1990. (No month).*
Stephan Ohr, “Darpa Sows Seeds of a Telecom Revolution,”EE Times, Aug. 4, 1997, p. 1.
F.M. Mueller, et al, “HTS Microwave Cavity with Temperature-Independent Frequencies,”IEEE Transactions on Applied Superconductivity, vol. 5, No. 2, Jun. 1995, pp 1983-1986.
C.J. Maggiore, et al, “Low-loss Microwave Cavity Using Layered-dielectric Materials,” Appl. Phys. Lett 64 (11) Mar. 14, 1994, pp. 1451-1453.
E. Yablonovitch, “Photonic Band-gap Structures,” Journal of the Optical Society of America Bulletin, vol. 10, No. 2, Feb. 1993, pp 283-295.
Henry O. Everitt, “Applications of Photonic Band Gap Structures,”Optics and Photonics News, Nov. 1992, pp 20-23.
N.C. Luhmann, Jr., High Power, High Efficiency, Monolithic Quasi-Optical Frequency Triplers Using Microwave Power Module Drivers, Feb. 27, 1996.
Joy Yi-Yin Liao, “Frequency Multipliers for Millimeter Wave Applications,” Riken Review, No. 11, Dec. 1995, pp5-6.
J. Grenzer, et al, “Frequency Multiplication of Microwave Radiation in a Semiconductor Superlattice by Electrons Capable to Perform Bloch Oscillations,” Annalen der Physik, Apr. 1995, pp 265-271.
K.N. Ostricov, et al, “Resonant Second Harmonics Generation of the Submillimeter Surface Wave in the Semiconductor Superlattice Bounded by a Metal,” IEEE Antennas and Propagation Society Int'l Symposium, 1995 Digest, vol. I, pp 742-745, Jun., 1995.
D. Lippens, “Quantum Well Devices for Millimetre Wave Applications,”23rdEuropean Microwave Conference, Madrid, Spain, Sep. 1993, pp 61-66.
M. Hadjazi, et al “60 GHz Reflection Gain Based on Superlattice Negative Differential Conductance,”Electronics Letters, Apr. 15, 1993, vol. 29, No. 8, pp 648-649.
Wen-Shiung Lour, “Multi-state Superlattice-Emitter Resonant-Tunneling Bipolar Transistor with Circuit Applications,”Superlattices and Microstructures, 1993, Academic Press Ltd., pp 81-86, received Aug. 1992.
Federico Capasso, “Quantum Effect Devices: Physics and Applications,” edited by Anastassakis & Joannopoulos, 20thInternational Conference on The Physics of Semiconductor, Aug. 1990, pp 379-386.
A.Y. Cho, “Current State and Future Challenge in Molecular Beam Epitaxy (MBE) Research,” Molecular Beam Epitaxy 1988, Sapporo, Japan, Reprinted fromJournal of Crystal Growth, 95 (1989) Nos. 104, pp 1-10, Aug., 1988.
Tohru Takada et al, “Frequency Triplers and Quadruplers with GaAs Schottky-Barrier Diodes at 450 and 600 GHz,” IEEE Transactions on Microwave Theory and Techniques, vol. MTT-27, No. 5, May 1979, pp 519-523.
L.A. Blackwell et al., “Semiconductor-Diode Parametric Amplifiers,” Prentice-Hall Inc., 1961, pp 57-60 and 101-121.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Q-switched cavity multiplier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Q-switched cavity multiplier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Q-switched cavity multiplier will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2596190

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.