Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1998-02-27
2000-09-26
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
336186, H01L 2941
Patent
active
061246247
ABSTRACT:
In an integrated circuit, such as an RF oscillator device, having multiple mutually separated levels of electrically conducting material, each level comprises a plurality of adjacently arranged strips separated from another. Strips of different levels are electrically parallel connected, forming a plurality of stacks of parallel connected strips. The stacks are connected to form an inductor having a first and second terminal.
REFERENCES:
patent: 3614554 (1971-10-01), Richardson et al.
patent: 4918417 (1990-04-01), Sakamoto
patent: 5416356 (1995-05-01), Staudinger et al.
patent: 5446311 (1995-08-01), Ewen et al.
patent: 5559360 (1996-09-01), Chiu et al.
patent: 5583470 (1996-12-01), Okubo
Van Roosmalen Marcel Wilhelm Rudolf Martin
Verreck Maurice
Hardy David
Telefonaktiebolaget LM Ericsson
LandOfFree
Q inductor with multiple metallization levels does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Q inductor with multiple metallization levels, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Q inductor with multiple metallization levels will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2102439