PZT (111) texture through Ir texture improvement

Details PZT (111) texture through Ir texture improvement PZT (111) texture through Ir texture improvement

2005-03-29

2005-03-29

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S003000

Reexamination Certificate

active

06872669

ABSTRACT:
The present invention is directed to a method of forming a ferroelectric capacitor having a (111) PZT texture. The method includes forming a smooth bottom electrode diffusion barrier layer that facilitates a preferential (111) texture in the subsequently formed bottom electrode layer. The (111) bottom electrode layer texture than facilitates a high quality (111) texture in the overlying PZT layer, thereby improving bit-to-bit polarization charge uniformity for various capacitors as the ferroelectric capacitor sizes continue to shrink.

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