Pyrolytic deposition of silicon dioxide on semiconductors using

Details Pyrolytic deposition of silicon dioxide on semiconductors using Pyrolytic deposition of silicon dioxide on semiconductors using

1976-06-07

1978-07-04

Goolkasian, John T.

Coating processes

Electrical product produced

Condenser or capacitor

427 93, 427 95, 427248C, 427255, 427295, 427300, 148 15, 148188, 118 49, 118500, 118504, B05D 512

Patent

active

040989232

ABSTRACT:
Silicon dioxide is pyrolytically deposited by the reaction of silane with oxygen on vertically mounted substrates in an evacuated system. A standard diffusion furnace equipped with a furnace tube which is vacuum tight is used. Injection tubes having multiple injection ports are positioned within the furnace tube to distribute the silane and the oxygen uniformly across a plurality of substrates which are positioned perpendicular to the furnace tube axis in a boat covered with a perforated shroud. The process is particularly useful in providing for the low temperature deposition of uniform layers of silicon dioxide on silicon wafers to be used in the fabrication of semiconductor devices.

REFERENCES:
patent: 3098763 (1963-07-01), Deal et al.
patent: 3481781 (1969-12-01), Kom
patent: 3598082 (1971-08-01), Rice
patent: 3706597 (1972-12-01), Li et al.
patent: 3854443 (1974-12-01), Baerg
patent: 3900597 (1975-08-01), Chruma et al.
patent: 3934060 (1976-01-01), Burt et al.
patent: 4005240 (1977-01-01), Schlacter
patent: 4018183 (1977-04-01), Meuleman
Eshbach et al., "Emitter Diffusion Systems" IBM Technical Disclosure Bulletin, vol. 13, No. 6, Nov. 1970.

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