Pyrogenic wet thermal oxidation of semiconductor wafers

Details Pyrogenic wet thermal oxidation of semiconductor wafers Pyrogenic wet thermal oxidation of semiconductor wafers

1996-07-31

1998-09-22

Bueker, Richard

Coating apparatus

Program, cyclic, or time control

Having prerecorded program medium

118704, 118715, 118719, 118724, 118725, C23C 1600

Patent

active

058109293

ABSTRACT:
An oxidizing gas containing water vapor generated by hydrogen combustion is introduced from an external gas burner via gas supply pipes into the upper space of a process tube surrounded by a heater, and exhausted from the lower part of the process tube. Until the flame of hydrogen burnt in the external gas burner becomes stable, a dilute gas such as N.sub.2 is introduced into the upper space of the process tube via other gas supply pipes so as to suppress the initial oxidation. Suppressing the initial oxidation may also be performed by bypassing an oxidizing gas from the external gas burner to an exhaust system while introducing a non-oxidizing gas such as N.sub.2 into the upper space of the process tube.

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