Pyramidal photonic crystal light emitting device

Details Pyramidal photonic crystal light emitting device Pyramidal photonic crystal light emitting device

2006-11-28

2009-11-10

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S026000, C438S027000, C438S069000

Reexamination Certificate

active

07615398

ABSTRACT:
A light-emitting device (LED) is described which exhibits high extraction efficiency and an emission profile which is substantially more directional than from a Lambertian source. The device comprises a light generating layer disposed between first and second layers of semiconductor material, each having a different type of doping. An upper surface of the first layer has a tiling arrangement of pyramidal or frustro-pyramidal protrusions of semiconductor material surrounded by a material of different refractive index which together comprise a photonic band structure. The protrusions and their tiling arrangement are configured for efficient extraction of light from the device via the upper surface of the first layer and in a beam that is substantially more directional than from a Lambertian source An enhanced device employs a reflector beneath the second layer to utilize the microcavity effect. A method for fabricating the device is also described which employs anisotropic wet etching to produce the pyramidal or frustro-pyramidal protrusions

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