Pyramid-shaped capacitor structure

Details Pyramid-shaped capacitor structure Pyramid-shaped capacitor structure

2006-09-19

2006-09-19

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S253000, C438S254000, C438S397000, C438S695000, C257S296000, C257S306000, C257S532000, C257SE27048

Reexamination Certificate

active

07109090

ABSTRACT:
A capacitor structure which has a generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at least one dielectric layer having a first area provided on the first conductive layer and a second conductive layer provided on the at least one dielectric layer. The second conductive layer has a second area which is less than the first area of the at least one dielectric layer. A method of fabricating a capacitor structure is also disclosed.

REFERENCES:
patent: 5903023 (1999-05-01), Hoshi
patent: 6207499 (2001-03-01), Hoshi
patent: 6462370 (2002-10-01), Kuwazawa
patent: 6579764 (2003-06-01), Kuwazawa
patent: 6858513 (2005-02-01), Fujisawa
patent: 2002/0022335 (2002-02-01), Chen
patent: 2003/0006442 (2003-01-01), Fujisawa
patent: 2003/0127675 (2003-07-01), Fujisawa
patent: 2005/0082586 (2005-04-01), Tu et al.

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