Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-04-19
2011-04-19
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185290, C438S264000, C257SE21409
Reexamination Certificate
active
07929345
ABSTRACT:
A method of for programming a push-pull memory cell to simultaneously program a p-channel non-volatile transistor and an n-channel non-volatile transistor includes driving to 0v wordlines for any row in which programming of memory cells is to be inhibited; driving to a positive voltage wordlines any row in which programming of memory cells is to be performed; driving to a positive voltage the bitlines for any column in which programming of memory cells is to be inhibited; driving to a negative voltage the bitlines for any column in which programming of memory cells is to be performed; driving to one of 0v and a negative voltage a center wordline for any row in which programming of memory cells is to be inhibited; and driving to one of 0v and a positive voltage the center wordline for any row in which programming of memory cells is to be performed.
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Actel Corporation
Ho Hoai V
Lewis and Roca LLP
Norman James G
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