Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing
Patent
1990-10-17
1991-08-06
Chaudhuri, Olik
Chemistry of inorganic compounds
Silicon or compound thereof
Oxygen containing
423335, C01B 3312
Patent
active
050376250
ABSTRACT:
Quartz is purified by removing mineral impurities, particularly alkali metal impurities, from within the quartz crystal lattice structure. According to the disclosed process, quartz crystals are subjected to a pretreatment that removes surface bound impurities and then contacted with gaseous HCl at a temperature of from 800.degree. C. to 1600.degree. C. for a period of time of from a few minutes to several hours, thereby diffusing the mineral impurities to the quartz crystal surface where they form salts with chloride ion, removing the salts, and recovering the purified quartz crystals.
REFERENCES:
patent: 4804422 (1989-02-01), Papanikolav et al.
patent: 4818510 (1989-04-01), Jung
James Robert D.
Loritsch Kenneth B.
Chaudhuri Olik
Horton Kenneth
The Feldspar Corporation
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