Purification of silicon source materials

Details Purification of silicon source materials Purification of silicon source materials

1981-06-15

1983-02-15

Cooper, Jack

Chemistry of inorganic compounds

Silicon or compound thereof

Halogen containing

C01B 33107

Patent

active

043741100

ABSTRACT:
A process is disclosed for the purification of trichlorosilane and other silicon source materials. Trace impurities of boron and phosphorous are removed from trichlorosilane by reacting small amounts of oxygen with the trichlorosilane at a temperature between about 170.degree. and 300.degree. C. The oxygen reacts with the Si--H bond in HSiCl.sub.3 to form a "SiOH" species which in turn complexes impurities such as BCl.sub.3 or PCl.sub.3 present in the trichlorosilane. Purification of the trichlorosilane is then easily accomplished during a subsequent distillation step which separates the purified trichlorosilane from the less volatile complexed boron or phosphorous compounds.

REFERENCES:
patent: 3252752 (1966-05-01), Pohl
patent: 3540861 (1970-11-01), Bradley et al.
patent: 3871872 (1975-03-01), Downing

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