Purification of silicon source materials

Details Purification of silicon source materials Purification of silicon source materials

1982-08-19

1983-10-11

Cooper, Jack

Chemistry of inorganic compounds

Silicon or compound thereof

Halogen containing

423277, 423300, 423304, 423326, 423327, 423341, C01B 33107

Patent

active

044091958

ABSTRACT:
A process is disclosed for the purification of trichlorosilane and other silicon source materials. Trace impurities of boron and phosphorous are removed from trichlorosilane or dichlorosilane by reacting small amounts of oxygen with the trichlorosilane or dichlorosilane at a temperature between about 60.degree. C. and 300.degree. C. The oxygen reacts with the Si--H bond in HSiCl.sub.3 or H.sub.2 SiCl.sub.2 to form a "SiOH" species which in turn complexes impurities such as BCl.sub.3 or PCl.sub.3 present in the chlorosilane. Purification of the chlorosilane is then easily accomplished during a subsequent distillation step which separates the purified chlorosilane from the less volatile complexed boron or phosphorous compounds.

REFERENCES:
patent: 3252752 (1966-05-01), Pohl
patent: 3540861 (1970-11-01), Bradley et al.
patent: 3871872 (1975-03-01), Downing

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