Purification of chlorosilanes

Details Purification of chlorosilanes Purification of chlorosilanes

1984-08-13

1987-12-15

Cooper, Jack

Chemistry of inorganic compounds

Silicon or compound thereof

Halogen containing

423342, C01B 3308, C01B 33107

Patent

active

047132302

ABSTRACT:
Chlorosilanes contaminated with boron-containing impurities can be purified by passing the chlorosilane vapor through a silica fixed bed. Normally the boron level in trichlorosilane is reduced by about 90-99+% by the use of this process. The capacities of the silica columns for the purification of trichlorosilane generally are in the range of 1500-2000 pounds trichlorosilane per pound of silica. The purified chlorosilane is particularly well suited for the production of polycrystalline silicon. Polycrystalline silicon containing 0.03 ppba (parts per billion atomic) has been prepared from trichlorosilane purified with this process.

REFERENCES:
patent: 2820698 (1958-01-01), Krchma
patent: 2877097 (1959-03-01), Wolff
patent: 3071444 (1963-01-01), Theuerer
patent: 3252752 (1966-05-01), Pohl et al.
patent: 3414603 (1968-12-01), Mlavsky
patent: 3540861 (1970-11-01), Bradley et al.
patent: 4112057 (1978-09-01), Lang et al.

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