Purging: a reliability assurance technique for semiconductor las

Details Purging: a reliability assurance technique for semiconductor las Purging: a reliability assurance technique for semiconductor las

1984-03-22

1986-03-04

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29569L, 29585, 148DIG72, 148DIG95, 148DIG162, 324 73R, 324158D, 324158R, 324158T, 357 17, 372 46, H01L 2166

Patent

active

045732558

ABSTRACT:
Prior to packaging, semiconductor lasers are purged by being subjected first to high temperature and high current simultaneously so as to suppress stimulated emission and stress the shunt paths which allow leakage current to flow around the active region. A prudent, but nonessential, second step is to lower the temperature and/or current so that the lasers emit stimulated emission (preferably strongly, near the peak output power), thereby stressing the active region. Lasers subjected to such a purge exhibit stabilized degradation rates in short times (of the order of a few hours) and provide a robust population which meets the performance criteria of long lifetime systems.

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