Pure silver ohmic contacts to N- and P- type gallium arsenide ma

Details Pure silver ohmic contacts to N- and P- type gallium arsenide ma Pure silver ohmic contacts to N- and P- type gallium arsenide ma

1983-05-13

1986-01-14

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

29572, 29589, 136262, 357 30, 357 65, 427 88, H01L 3104, H01L 3118

Patent

active

045647208

ABSTRACT:
Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

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