Pure green light emitting diodes and method of manufacturing the

Details Pure green light emitting diodes and method of manufacturing the Pure green light emitting diodes and method of manufacturing the

1985-11-12

1990-10-23

Sikes, William L.

H01L 3300

Patent

active

049656449

ABSTRACT:
Pure-green light emitting diodes include an n-type GaP layer formed on an n-type GaP substrate and a p-type GaP layer formed by using a liquid phase epitaxial method, the average donor concentration of the p-type GaP layer being less than or equal to 5.times.10.sup.16 cm.sup.-3. Liquid phase crystal growth of the above p-type GaP layer is realized by applying a method of keeping the melt used for the liquid phase crystal growth of the n-type GaP layer at a constant temperature and the ambient atmosphere at a reduced pressure for a prescribed period of time thereby to volatilize donor impurities from the melt and to compensate the donor impurities. Pure-green light emitting diodes easily distinguishable from yellow-green and having high brightness can be manufactured by applying the over-compensation method which is suitable for mass production.

REFERENCES:
patent: 3870575 (1975-03-01), Dosen
patent: 3931631 (1976-01-01), Groves et al.
patent: 4001056 (1977-01-01), Groves et al.
patent: 4101920 (1978-07-01), Nagasawa et al.
patent: 4228455 (1980-10-01), Yasuda et al.
patent: 4417262 (1983-11-01), Iwamoto et al.
Japanese magazine "Electronics Parts and Materials", Feb. 1980, pp. 73-77, Pure Green (555 nm) LED written by Kaoru Takahashi (English translation of pp. 73 to 75 being also attached herewith.).
J. Appl. Phys., 53(5), May 1982, pp. 2878-3883 "Photocapacitance Study of Deep Levels Due to Nonstoichiometry in Nitrogen Free CAP Light-Emitting Diodes".
Proceedings of the 9th Conference on Solid State Devices, Tokyo 1977, pp. 87-92, "Effects of Vapor Pressure on GaP LED's".
Nishizawa, Jun-ichi, et al., "Effects of Vapor Pressure on GaP LED's", Proceedings of the 9th Conference on Solid State Devices, Tokyo, 1977; Japanese Journal of Applied Physics, vol. 17, (1988), Supplement 17-1, pp. 87-92.
J. Nishizawa, et al., "Photocapacitance Study of Deep Levels Due to Nonstoichiometry in Nitrogen-free GaP Light-Emitting Diodes," Journal of Applied Physics, 53(5), May 1982.

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