Punchthru ESD device along centerline of power pad

Details Punchthru ESD device along centerline of power pad Punchthru ESD device along centerline of power pad

1993-02-25

1994-11-15

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Punchthrough structure device

257362, 257786, 257758, H01L 2906, H01L 2944

Patent

active

053651030

ABSTRACT:
Multiple punchthru devices are coupled between multiple metal-two conductors and a metal-one bond pad. Each punchthru device has the capacity to couple its respective metal-two conductor to the bond pad when a predetermined voltage potential exists between the metal-two conductor and the bond pad. A set of metal-one islands, one set associated with each metal-one bond pad cell, resides in a bond pad channel. The positioning of the punchthru devices and the islands minimizing the bond pad cell size and minimizing the spacing between adjacent bond pad cells. The bond pad cell configuration also allows any metal-two conductor to be coupled to the bond pad without having to rearrange punchthru devices or reconfigure the bond pad cell. The multiple punchthru devices associated with each bond pad cell provide redundant overvoltage protection superior to present overvoltage protection circuits.

REFERENCES:
patent: 4499557 (1985-02-01), Holmberg et al.
patent: 4994874 (1991-02-01), Shimizu et al.
patent: 5291051 (1994-03-01), Hoang et al.

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