Active solid-state devices (e.g. – transistors – solid-state diode – Punchthrough structure device
Reexamination Certificate
2008-09-26
2010-06-01
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Punchthrough structure device
C257SE29332, C438S546000
Reexamination Certificate
active
07728404
ABSTRACT:
A semiconductor device includes a substrate of a first conductivity type, and a first semiconductor region that includes a plurality of sub-regions of the first conductivity type that have a first doping concentration and a further semiconductor region of a second conductivity type opposite to the first conductivity type. The further semiconductor region separates the sub-regions from each other and the first semiconductor region is located on the substrate. The semiconductor device further includes a second semiconductor region of the first conductivity type located on the first semiconductor region, a third semiconductor region of the second conductivity type located on the second semiconductor region, and a fourth semiconductor region of the first conductivity type located on the third semiconductor region. The sub regions extend from the second semiconductor region into the substrate, and the thickness and the doping concentration of the second and the third semiconductor region are such that these regions are completely depleted during operation of the device.
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Koops Gerrit Elbert Johannes
Van Dalen Rob
Kraig William F
Le Thao X
NXP B.V.
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