Punch through reference diode

Details Punch through reference diode Punch through reference diode

1980-12-29

1983-09-20

Edlow, Martin H.

357 86, 357 28, 357 90, H01L 2990

Patent

active

044059329

ABSTRACT:
This invention is directed to a punch-through reference diode comprising a first semiconductor region of a first conductivity type which is formed within a semiconductor body; a second semiconductor region of a second conductivity type which is formed within the semiconductor body, the second semiconductor region adjoining the first semiconductor region and defining a first PN-junction with the first semiconductor region; and a third semiconductor region of the first conductivity type which is formed within the semiconductor body, the third semiconductor region adjoining the second semiconductor region and defining a second PN-junction with the second semiconductor region, whereby the second semiconductor region is located between the first PN-junction and the second PN-junction. The diode is characterized in that the second semiconductor region has an impurity concentration distribution in which a concentration of an impurity of the second conductivity type increases from the first PN-junction towards the second PN-junction; that the first and second semiconductor regions are provided with a connection for electrically connecting them in order to short the first PN-junction; and that the first and third semiconductor regions are respectively provided with connections for supplying a voltage so as to reverse-bias the second PN-junction.

REFERENCES:
patent: 3856578 (1974-12-01), Payne
patent: 4080616 (1978-03-01), Horie
patent: 4136353 (1979-01-01), Polinsky

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